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  2 www.fairchildsemi.com FFB20UP20S — Ultrafast Diode Electrical Characteristics TC = 25°C unless otherwise noted *Pulse Test: Pulse Width=300 μs, Duty Cycle=2% Test Circuit and Waveforms Symbol Parameter Min. Typ. Max. Unit VF * IF = 20 A IF = 20 A TC = 25 °C TC = 100 °C - - - - 1.15 1.0 V V IR * VR = 200 V VR = 200 V TC = 25 ° C TC = 100 °C - - - - 100 500 μA μA trr IF =1 A, diF/dt = 100 A/μs, VR = 30 V IF =20 A, diF/dt = 200 A/μs, VR = 130 V TC = 25 °C TC = 25 °C - - - - 35 45 ns ns ta tb Qrr IF =20 A, diF/dt = 200 A/μs, VR = 130 V TC = 25 °C TC = 25 °C TC = 25 ° C - - - 11 13 21 - - - ns ns nC WAVL Avalanche Energy (L = 4 0 mH) 20 - - mJ ?2006 Fairchild Semiconductor Cor poration FFB20UP20S Rev.C1 Figure 1. Diode Reverse Recovery Test Circuit & Waveform Figure 2. Unclamped Inductive Switching Test Circuit & Waveform |